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5253B P125H MNR4G HI1106 X1226S8Z 314030 SAA71 BZX84B12
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  1 2 pin 16.5 0.3 10.2 0.2 15.2 0.5 4.0 0.3 13.5 0.5 5.0 0.1 1.4 0.1 0.6 0.1 4.5 0.2 3.1 +0.2 -0.1 |? 3 . 3 0 .1 ?3.20.2 8.2 0.2 2.6 0.2 0.6 0.1 features low cost low leakage low forward voltage drop high current capability mechanical data ca s e : jedec ito-220ac ,molded plastic t e r m i n a l s : solderable per m i l - s t d - 750 , method 2026 p o l a r i t y : as marked w e i g h t : 0.064 ounces,1.81 gram mounting position: any ratings at 25 ambient temperature unless otherwise specified. single phase,half wave,60 hz,resistive or inductive load. for capacitive load,derate by 20%. m u r m u r m u r m u r m u r un i t s maximum recurrent peak reverse voltage v r r m v m a x i m u m r ms v o l t ag e v r m s v max imum dc bloc king v oltage v dc v maximum average forw ard rectified current @ t c = 100 peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @t j = 1 2 5 maximum instantaneous forw ard voltage @ 10 a v f v m a x i m u m r e v e r s e c u rr en t @ t a = 2 5 at r a t ed d c b l o c k i n g v o l t a ge @ t a = 1 25 maximum reverse recovery time (note1) t rr ns o p e r a t i n g j u n c t i on t e m pe r a t u r e r a n g e t j s t o r age t e m p e r a t u r e r a n g e t s t g the plastic material carries u/l recognition 94v-0 n o t e : 1. m ea s u red w i t h i f = 0 . 5 a , i r = 1 a , i r r = 0 . 25 a . a 125 i r i fsm 250 500 a 5.0 1 0 . 0 maximum ratings and electrical characteristics mur 1005 f - - - mur 1060f a s u pe r f a s t r e c t i f i e r s v o l t a g e r a n g e : 5 0 --- 60 0 v c u r r e n t : 10 a ito-220ac easily cleaned with alcohol,isopropanol and s im ilar s olvents i f ( a v ) 10 m u r 10 05 f 1010 f 1015 f 1020 f 1040 f 1060 f - 5 5 - ---- + 1 5 0 0.975 35 70 105 140 280 420 50 100 150 200 400 600 25 1.3 1.5 50 50 100 150 200 400 600 - 5 5 - ---- + 1 5 0 dimensions in millimeters www.diode.kr diode semiconductor korea
. 6 .8 1.0 1.2 1.4 1.6 1.8 2.0 0. 1 1.0 1 0 1 0 0 10 0 0 tj=25 c pulse width=300 s 1% duty cycle o mur1005 f ~mur1020 f mur1040 f mur1060 f 0 25 1 100 1 25 5 0 75 100 10 8 . 3 m s s i ng l e h a l f s i n e w a v e t j = 125 amperes instantaneous forward current fig. 4 -forword derating curve case temperature, average forward current peak forward surge current amperes amperes mur 1005f - - - mur 1060f fi g. 1 -- test ci rcui t di agram and reverse recovery ti me characteri sti c i n s t a n t a n e o u s f o r w a r d v o l t a g e, v o l t s z s e t t i m e b a s e f o r 10 / 2 0 n s / c m notes:1.rise time = 7ns max.input impedance =1m . 22pf. jjjj 2.rise time =10ns max.so urce impedance=50 . fi g. 2 -- typi cal forward characteri sti c fig.3 -- peak forward surge current - 1 . 0 a - 0 . 2 5 a 0 + 0 . 5 a t rr 1cm pulse generator (note2) d.u.t. 1 nonin- ductive 50 n 1. 10 n1. oscilloscope (note 1) (+) 25vdc (approx) (-) 0 25 50 75 100 125 150 single phase h a l f w a v e 6 0 h z r e s i s t i ve o r i ndu c t i v e lo a d 175 2.0 4.0 6.0 8.0 10 12 0 number of cycles at 60hz www.diode.kr diode semiconductor korea


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